All MOSFET. YJG90G10A Datasheet

 

YJG90G10A Datasheet and Replacement


   Type Designator: YJG90G10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34.7 nS
   Cossⓘ - Output Capacitance: 1658 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PDFN5X6
 

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YJG90G10A Datasheet (PDF)

 ..1. Size:1141K  cn yangzhou yangjie elec
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YJG90G10A

RoHS COMPLIANT YJG90G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 90A D R ( at V =10V) 5.0mohm DS(ON) GS R ( at V =4.5V) 7.1mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High density ce

Datasheet: YJD90N02A , YJG15GP10A , YJG30N06A , YJG40G10A , YJG50N03A , YJG70G06A , YJG80G06B , YJG85G06AK , IRLB4132 , YJJ09N03A , YJL02N10A , YJL03G10A , YJL03N06A , YJL05N06AL , YJL07P03AL , YJL2101W , YJL2102W .

History: STN3414 | HAT2164H

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