YJG90G10A Specs and Replacement

Type Designator: YJG90G10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34.7 nS

Cossⓘ - Output Capacitance: 1658 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PDFN5X6

YJG90G10A substitution

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YJG90G10A datasheet

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YJG90G10A

RoHS COMPLIANT YJG90G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 90A D R ( at V =10V) 5.0mohm DS(ON) GS R ( at V =4.5V) 7.1mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High density ce... See More ⇒

Detailed specifications: YJD90N02A, YJG15GP10A, YJG30N06A, YJG40G10A, YJG50N03A, YJG70G06A, YJG80G06B, YJG85G06AK, CS150N03A8, YJJ09N03A, YJL02N10A, YJL03G10A, YJL03N06A, YJL05N06AL, YJL07P03AL, YJL2101W, YJL2102W

Keywords - YJG90G10A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.