YJG90G10A MOSFET. Datasheet pdf. Equivalent
Type Designator: YJG90G10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 66 nC
trⓘ - Rise Time: 34.7 nS
Cossⓘ - Output Capacitance: 1658 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PDFN5X6
YJG90G10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YJG90G10A Datasheet (PDF)
..1. Size:1141K cn yangzhou yangjie elec
yjg90g10a.pdf
yjg90g10a.pdf
RoHS COMPLIANT YJG90G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 90A D R ( at V =10V) 5.0mohm DS(ON) GS R ( at V =4.5V) 7.1mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High density ce
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