All MOSFET. YJG90G10A Datasheet

 

YJG90G10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJG90G10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 34.7 nS
   Cossⓘ - Output Capacitance: 1658 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PDFN5X6

 YJG90G10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJG90G10A Datasheet (PDF)

 ..1. Size:1141K  cn yangzhou yangjie elec
 yjg90g10a.pdf

YJG90G10A YJG90G10A

RoHS COMPLIANT YJG90G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 90A D R ( at V =10V) 5.0mohm DS(ON) GS R ( at V =4.5V) 7.1mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High density ce

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top