All MOSFET. YJL03N06A Datasheet

 

YJL03N06A Datasheet and Replacement


   Type Designator: YJL03N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23
 

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YJL03N06A Datasheet (PDF)

 ..1. Size:583K  cn yangzhou yangjie elec
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YJL03N06A

RoHS COMPLIANT YJL03N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 3.0A D R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications

 9.1. Size:732K  cn yangzhou yangjie elec
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YJL03N06A

RoHS COMPLIANT YJL03G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 3.0A D R ( at V =10V) 140 mohm DS(ON) GSGeneral Description Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic power supply

Datasheet: YJG50N03A , YJG70G06A , YJG80G06B , YJG85G06AK , YJG90G10A , YJJ09N03A , YJL02N10A , YJL03G10A , 20N50 , YJL05N06AL , YJL07P03AL , YJL2101W , YJL2102W , YJL2300A , YJL2301C , YJL2301D , YJL2301F .

History: 2SK3399B | UPA1919 | AP9468GS-HF | KMD6D0DN40Q | R6020FNX | NCE40ND25Q | AP4425GM

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