FDB2532F085 Datasheet. Specs and Replacement

Type Designator: FDB2532F085  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 79 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO263 D2PAK

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FDB2532F085 substitution

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FDB2532F085 datasheet

 7.1. Size:205K  fairchild semi
fdb2532 f085.pdf pdf_icon

FDB2532F085

September 2010 FDB2532_F085 N-Channel PowerTrench MOSFET 150V, 79A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rec... See More ⇒

 7.2. Size:275K  fairchild semi
fdb2532 fdp2532 fdi2532.pdf pdf_icon

FDB2532F085

August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage S... See More ⇒

 7.3. Size:1144K  onsemi
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FDB2532F085

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.4. Size:1142K  onsemi
fdb2532-f085.pdf pdf_icon

FDB2532F085

MOSFET N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDB2532-F085 Features www.onsemi.com RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A Qg (tot) = 82 nC (Typ.), VGS = 10 V D Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) G AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant S A... See More ⇒

Detailed specifications: FDB12N50U, FDB13AN06A0, FDB14AN06LA0F085, FDB14N30, FDB150N10, STU408D, FDB15N50, FDB2532, AO3401, FDB2552, FDB2572, FDB2614, STU409DH, FDB2710, FDB28N30TM, FDB33N25, FDB3502

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.