Справочник MOSFET. FDB2532F085

 

FDB2532F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDB2532F085
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 79 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO263 D2PAK

 Аналог (замена) для FDB2532F085

 

 

FDB2532F085 Datasheet (PDF)

 7.1. Size:205K  fairchild semi
fdb2532 f085.pdf

FDB2532F085
FDB2532F085

September 2010FDB2532_F085N-Channel PowerTrench MOSFET150V, 79A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rec

 7.2. Size:275K  fairchild semi
fdb2532 fdp2532 fdi2532.pdf

FDB2532F085
FDB2532F085

August 2002FDB2532 / FDP2532 / FDI2532N-Channel PowerTrench MOSFET150V, 79A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage S

 7.3. Size:1144K  onsemi
fdp2532 fdb2532.pdf

FDB2532F085
FDB2532F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:1142K  onsemi
fdb2532-f085.pdf

FDB2532F085
FDB2532F085

MOSFET N-Channel,POWERTRENCH)150 V, 79 A, 16 mWFDB2532-F085Featureswww.onsemi.com RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A Qg (tot) = 82 nC (Typ.), VGS = 10 VD Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)G AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantSA

Другие MOSFET... FDB12N50U , FDB13AN06A0 , FDB14AN06LA0F085 , FDB14N30 , FDB150N10 , STU408D , FDB15N50 , FDB2532 , AO4407 , FDB2552 , FDB2572 , FDB2614 , STU409DH , FDB2710 , FDB28N30TM , FDB33N25 , FDB3502 .

 

 
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