YJL2301D Specs and Replacement

Type Designator: YJL2301D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 89 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SOT23

YJL2301D substitution

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YJL2301D datasheet

 ..1. Size:593K  cn yangzhou yangjie elec
 yjl2301d.pdf pdf_icon

YJL2301D

RoHS COMPLIANT YJL2301D P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -3.8A D R ( at V =-4.5V) 52 mohm DS(ON) GS R ( at V =-2.5V) 78 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi... See More ⇒

 7.1. Size:618K  cn yangzhou yangjie elec
 yjl2301g.pdf pdf_icon

YJL2301D

RoHS COMPLIANT YJL2301G P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -2.0A D R ( at V =-4.5V) 100 mohm DS(ON) GS R ( at V =-2.5V) 130 mohm DS(ON) GS R ( at V =-1.8V) 230 mohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications ... See More ⇒

 7.2. Size:579K  cn yangzhou yangjie elec
 yjl2301f.pdf pdf_icon

YJL2301D

RoHS COMPLIANT YJL2301F P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -2A D R ( at V =-4.5V) 120 mohm DS(ON) GS R ( at V =-2.5V) 150 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi... See More ⇒

 7.3. Size:519K  cn yangzhou yangjie elec
 yjl2301c.pdf pdf_icon

YJL2301D

RoHS COMPLIANT YJL2301C P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -3.4A D R ( at V =-4.5V) 64 mohm DS(ON) GS R ( at V =-2.5V) 80 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Power and Current handing capability Low Gate Ch... See More ⇒

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Detailed specifications: YJL03G10A, YJL03N06A, YJL05N06AL, YJL07P03AL, YJL2101W, YJL2102W, YJL2300A, YJL2301C, 2SK3568, YJL2301F, YJL2301G, YJL2302A, YJL2302B, YJL2303A, YJL2304A, YJL2305A, YJL2305B

Keywords - YJL2301D MOSFET specs

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