YJL2301D - параметры транзистора MOSFET, его аналоги, datasheet

YJL2301D Datasheet (PDF)

..1. Size:593K cn yangzhou yangjie elec
yjl2301d.pdf pdf_icon

RoHS COMPLIANT YJL2301D P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -3.8A D R ( at V =-4.5V) 52 mohm DS(ON) GS R ( at V =-2.5V) 78 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi

7.1. Size:618K cn yangzhou yangjie elec
yjl2301g.pdf pdf_icon

RoHS COMPLIANT YJL2301G P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -2.0A D R ( at V =-4.5V) 100 mohm DS(ON) GS R ( at V =-2.5V) 130 mohm DS(ON) GS R ( at V =-1.8V) 230 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications

7.2. Size:579K cn yangzhou yangjie elec
yjl2301f.pdf pdf_icon

RoHS COMPLIANT YJL2301F P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -2A D R ( at V =-4.5V) 120 mohm DS(ON) GS R ( at V =-2.5V) 150 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi

7.3. Size:519K cn yangzhou yangjie elec
yjl2301c.pdf pdf_icon

RoHS COMPLIANT YJL2301C P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -3.4A D R ( at V =-4.5V) 64 mohm DS(ON) GS R ( at V =-2.5V) 80 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and Current handing capability Low Gate Ch

Другие MOSFET... YJL03G10A , YJL03N06A , YJL05N06AL , YJL07P03AL , YJL2101W , YJL2102W , YJL2300A , YJL2301C , 5N65 , YJL2301F , YJL2301G , YJL2302A , YJL2302B , YJL2303A , YJL2304A , YJL2305A , YJL2305B .