All MOSFET. YJL2305B Datasheet

 

YJL2305B Datasheet and Replacement


   Type Designator: YJL2305B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOT23
 

 YJL2305B substitution

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YJL2305B Datasheet (PDF)

 ..1. Size:611K  cn yangzhou yangjie elec
 yjl2305b.pdf pdf_icon

YJL2305B

RoHS COMPLIANT YJL2305B P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.4A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 75 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed

 7.1. Size:650K  cn yangzhou yangjie elec
 yjl2305a.pdf pdf_icon

YJL2305B

RoHS COMPLIANT YJL2305A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -5.6A D R ( at V =-4.5V) 36.4 mohm DS(ON) GS R ( at V =-2.5V) 53.0 mohm DS(ON) GS R ( at V =-1.8V) 70.0 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High

 8.1. Size:542K  cn yangzhou yangjie elec
 yjl2304a.pdf pdf_icon

YJL2305B

RoHS COMPLIANT YJL2304A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 3.6A D R ( at V =10V) 39 mohm DS(ON) GS R ( at V =4.5V) 52 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute M

 8.2. Size:628K  cn yangzhou yangjie elec
 yjl2303a.pdf pdf_icon

YJL2305B

RoHS COMPLIANT YJL2303A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -3.0A D R ( at V =-10V) 85 mohm DS(ON) GS R ( at V =-4.5V) 105 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications PMW applicatio

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Datasheet: YJL2301D , YJL2301F , YJL2301G , YJL2302A , YJL2302B , YJL2303A , YJL2304A , YJL2305A , CS150N03A8 , YJL2312A , YJL2312AL , YJL3134K , YJL3134KW , YJL3139KDW , YJL3139KT , YJL3400A , YJL3401A .

History: FTK2N65P

Keywords - YJL2305B MOSFET datasheet

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 YJL2305B equivalent finder
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