All MOSFET. YJL3134K Datasheet

 

YJL3134K MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJL3134K
   Marking Code: 34K.
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1 nC
   trⓘ - Rise Time: 18.8 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT23

 YJL3134K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJL3134K Datasheet (PDF)

 ..1. Size:423K  cn yangzhou yangjie elec
 yjl3134k.pdf

YJL3134K YJL3134K

RoHS COMPLIANT YJL3134K N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 0.9A D R ( at V =4.5V) 250 mohm DS(ON) GS R ( at V =2.5V) 350 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications Interf

 0.1. Size:844K  cn yangzhou yangjie elec
 yjl3134kw.pdf

YJL3134K YJL3134K

RoHS COMPLIANT YJL3134KW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20 V DS I 0.75 A D R ( at V =4.5V) 260 mohm DS(ON) GS R ( at V =2.5V) 360 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW

 8.1. Size:837K  cn yangzhou yangjie elec
 yjl3139kt.pdf

YJL3134K YJL3134K

RoHS COMPLIANT YJL3139KT P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed swi

 8.2. Size:850K  cn yangzhou yangjie elec
 yjl3139kdw.pdf

YJL3134K YJL3134K

RoHS COMPLIANT YJL3139KDW P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed sw

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTP8N50E | IXFP10N60P

 

 
Back to Top