YJL3134K Specs and Replacement

Type Designator: YJL3134K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.8 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT23

YJL3134K substitution

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YJL3134K datasheet

 ..1. Size:423K  cn yangzhou yangjie elec
 yjl3134k.pdf pdf_icon

YJL3134K

RoHS COMPLIANT YJL3134K N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 0.9A D R ( at V =4.5V) 250 mohm DS(ON) GS R ( at V =2.5V) 350 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications Interf... See More ⇒

 0.1. Size:844K  cn yangzhou yangjie elec
 yjl3134kw.pdf pdf_icon

YJL3134K

RoHS COMPLIANT YJL3134KW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20 V DS I 0.75 A D R ( at V =4.5V) 260 mohm DS(ON) GS R ( at V =2.5V) 360 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW... See More ⇒

 8.1. Size:837K  cn yangzhou yangjie elec
 yjl3139kt.pdf pdf_icon

YJL3134K

RoHS COMPLIANT YJL3139KT P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed swi... See More ⇒

 8.2. Size:850K  cn yangzhou yangjie elec
 yjl3139kdw.pdf pdf_icon

YJL3134K

RoHS COMPLIANT YJL3139KDW P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed sw... See More ⇒

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Detailed specifications: YJL2302A, YJL2302B, YJL2303A, YJL2304A, YJL2305A, YJL2305B, YJL2312A, YJL2312AL, IRFZ24N, YJL3134KW, YJL3139KDW, YJL3139KT, YJL3400A, YJL3401A, YJL3404A, YJL3407A, YJL3415A

Keywords - YJL3134K MOSFET specs

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