YJL3134K - параметры транзистора MOSFET, его аналоги, datasheet

YJL3134K Datasheet (PDF)

..1. Size:423K cn yangzhou yangjie elec
yjl3134k.pdf pdf_icon

RoHS COMPLIANT YJL3134K N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 0.9A D R ( at V =4.5V) 250 mohm DS(ON) GS R ( at V =2.5V) 350 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications Interf

0.1. Size:844K cn yangzhou yangjie elec
yjl3134kw.pdf pdf_icon

RoHS COMPLIANT YJL3134KW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20 V DS I 0.75 A D R ( at V =4.5V) 260 mohm DS(ON) GS R ( at V =2.5V) 360 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW

8.1. Size:837K cn yangzhou yangjie elec
yjl3139kt.pdf pdf_icon

RoHS COMPLIANT YJL3139KT P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed swi

8.2. Size:850K cn yangzhou yangjie elec
yjl3139kdw.pdf pdf_icon

RoHS COMPLIANT YJL3139KDW P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed sw

Другие MOSFET... YJL2302A , YJL2302B , YJL2303A , YJL2304A , YJL2305A , YJL2305B , YJL2312A , YJL2312AL , AON6380 , YJL3134KW , YJL3139KDW , YJL3139KT , YJL3400A , YJL3401A , YJL3404A , YJL3407A , YJL3415A .