All MOSFET. YJL3139KDW Datasheet

 

YJL3139KDW MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJL3139KDW
   Marking Code: 39K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 0.65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.24 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: SOT363

 YJL3139KDW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJL3139KDW Datasheet (PDF)

 ..1. Size:850K  cn yangzhou yangjie elec
 yjl3139kdw.pdf

YJL3139KDW YJL3139KDW

RoHS COMPLIANT YJL3139KDW P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed sw

 6.1. Size:837K  cn yangzhou yangjie elec
 yjl3139kt.pdf

YJL3139KDW YJL3139KDW

RoHS COMPLIANT YJL3139KT P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed swi

 8.1. Size:844K  cn yangzhou yangjie elec
 yjl3134kw.pdf

YJL3139KDW YJL3139KDW

RoHS COMPLIANT YJL3134KW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20 V DS I 0.75 A D R ( at V =4.5V) 260 mohm DS(ON) GS R ( at V =2.5V) 360 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW

 8.2. Size:423K  cn yangzhou yangjie elec
 yjl3134k.pdf

YJL3139KDW YJL3139KDW

RoHS COMPLIANT YJL3134K N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 0.9A D R ( at V =4.5V) 250 mohm DS(ON) GS R ( at V =2.5V) 350 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications Interf

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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