YJL3139KDW - параметры транзистора MOSFET, его аналоги, datasheet

YJL3139KDW Datasheet (PDF)

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RoHS COMPLIANT YJL3139KDW P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed sw

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RoHS COMPLIANT YJL3139KT P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -0.65A D R ( at V =-4.5V) 520 mohm DS(ON) GS R ( at V =-2.5V) 750 mohm DS(ON) GS ESD Protected Up to 4.5KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed swi

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RoHS COMPLIANT YJL3134KW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20 V DS I 0.75 A D R ( at V =4.5V) 260 mohm DS(ON) GS R ( at V =2.5V) 360 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW

8.2. Size:423K cn yangzhou yangjie elec
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RoHS COMPLIANT YJL3134K N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 0.9A D R ( at V =4.5V) 250 mohm DS(ON) GS R ( at V =2.5V) 350 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications Interf

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .