YJP150N06AQ Specs and Replacement

Type Designator: YJP150N06AQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 475 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO220

YJP150N06AQ substitution

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YJP150N06AQ datasheet

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YJP150N06AQ

RoHS COMPLIANT YJP150N06AQ N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 150A D R ( at V =10V) 5.5mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications ... See More ⇒

Detailed specifications: YJL3139KDW, YJL3139KT, YJL3400A, YJL3401A, YJL3404A, YJL3407A, YJL3415A, YJL3416A, IRFZ48N, YJP200G06A, YJP70G10A, YJQ20N04A, YJQ30N03A, YJQ3400A, YJQ3415A, YJQ35N04A, YJQ40G10A

Keywords - YJP150N06AQ MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.