All MOSFET. YJP200G06A Datasheet

 

YJP200G06A Datasheet and Replacement


   Type Designator: YJP200G06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 93 nC
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: TO220
 

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YJP200G06A Datasheet (PDF)

 ..1. Size:1254K  cn yangzhou yangjie elec
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YJP200G06A

RoHS COMPLIANT YJP200G06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 200A D R ( at V =10V) 2.9 mohm DS(ON) GS R ( at V =4.5V) 3.6 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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