YJP200G06A Specs and Replacement

Type Designator: YJP200G06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 1250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: TO220

YJP200G06A substitution

- MOSFET ⓘ Cross-Reference Search

 

YJP200G06A datasheet

 ..1. Size:1254K  cn yangzhou yangjie elec
 yjp200g06a.pdf pdf_icon

YJP200G06A

RoHS COMPLIANT YJP200G06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 200A D R ( at V =10V) 2.9 mohm DS(ON) GS R ( at V =4.5V) 3.6 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density... See More ⇒

Detailed specifications: YJL3139KT, YJL3400A, YJL3401A, YJL3404A, YJL3407A, YJL3415A, YJL3416A, YJP150N06AQ, IRFZ46N, YJP70G10A, YJQ20N04A, YJQ30N03A, YJQ3400A, YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A

Keywords - YJP200G06A MOSFET specs

 YJP200G06A cross reference

 YJP200G06A equivalent finder

 YJP200G06A pdf lookup

 YJP200G06A substitution

 YJP200G06A replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.