All MOSFET. YJP200G06A Datasheet

 

YJP200G06A Datasheet and Replacement


   Type Designator: YJP200G06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: TO220
 

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YJP200G06A Datasheet (PDF)

 ..1. Size:1254K  cn yangzhou yangjie elec
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YJP200G06A

RoHS COMPLIANT YJP200G06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 200A D R ( at V =10V) 2.9 mohm DS(ON) GS R ( at V =4.5V) 3.6 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split Gate Trench MOSFET technology Excellent package for heat dissipation High density

Datasheet: YJL3139KT , YJL3400A , YJL3401A , YJL3404A , YJL3407A , YJL3415A , YJL3416A , YJP150N06AQ , RU7088R , YJP70G10A , YJQ20N04A , YJQ30N03A , YJQ3400A , YJQ3415A , YJQ35N04A , YJQ40G10A , YJQ40P03A .

History: WMB115N15HG4 | SMIRF8N65T1TL | R5009ANX | ELM24604HA | NTMFS5C468NLT1G | FTK35N03PDFN56 | WMB115N15LG4

Keywords - YJP200G06A MOSFET datasheet

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