All MOSFET. YJQ30N03A Datasheet

 

YJQ30N03A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJQ30N03A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3.3X3.3

 YJQ30N03A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJQ30N03A Datasheet (PDF)

 ..1. Size:1293K  cn yangzhou yangjie elec
 yjq30n03a.pdf

YJQ30N03A YJQ30N03A

RoHS COMPLIANT YJQ30N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 30A D R ( at V =10V) 9 mohm DS(ON) GS R ( at V =4.5V) 13 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell d

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2SK2891-01

 

 
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