YJQ30N03A Specs and Replacement

Type Designator: YJQ30N03A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 201 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN3.3X3.3

YJQ30N03A substitution

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YJQ30N03A datasheet

 ..1. Size:1293K  cn yangzhou yangjie elec
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YJQ30N03A

RoHS COMPLIANT YJQ30N03A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 30A D R ( at V =10V) 9 mohm DS(ON) GS R ( at V =4.5V) 13 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density cell d... See More ⇒

Detailed specifications: YJL3404A, YJL3407A, YJL3415A, YJL3416A, YJP150N06AQ, YJP200G06A, YJP70G10A, YJQ20N04A, IRF9640, YJQ3400A, YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A, YJQ4666B, YJQ55P02A, YJQ62G06A

Keywords - YJQ30N03A MOSFET specs

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