YJQ3400A Specs and Replacement

Type Designator: YJQ3400A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28.2 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: DFN2020-6L

YJQ3400A substitution

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YJQ3400A datasheet

 ..1. Size:1312K  cn yangzhou yangjie elec
 yjq3400a.pdf pdf_icon

YJQ3400A

RoHS COMPLIANT YJQ3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 7.7A D R ( at V =10V) 23mohm DS(ON) GS R ( at V =4.5V) 29mohm DS(ON) GS R ( at V =2.5V) 43mohm DS(ON) GS 100% V Tested DS General Description Trench Power LV MOSFET technology High density cell design for low R DS(ON... See More ⇒

 9.1. Size:1058K  cn yangzhou yangjie elec
 yjq3415a.pdf pdf_icon

YJQ3400A

RoHS COMPLIANT YJQ3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -6.2A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des... See More ⇒

Detailed specifications: YJL3407A, YJL3415A, YJL3416A, YJP150N06AQ, YJP200G06A, YJP70G10A, YJQ20N04A, YJQ30N03A, IRFB7545, YJQ3415A, YJQ35N04A, YJQ40G10A, YJQ40P03A, YJQ4666B, YJQ55P02A, YJQ62G06A, YJQD30P02A

Keywords - YJQ3400A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.