All MOSFET. YJQ3400A Datasheet

 

YJQ3400A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YJQ3400A
   Marking Code: 3400A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 7.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.25 nC
   trⓘ - Rise Time: 28.2 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: DFN2020-6L

 YJQ3400A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YJQ3400A Datasheet (PDF)

 ..1. Size:1312K  cn yangzhou yangjie elec
 yjq3400a.pdf

YJQ3400A YJQ3400A

RoHS COMPLIANT YJQ3400A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 7.7A D R ( at V =10V) 23mohm DS(ON) GS R ( at V =4.5V) 29mohm DS(ON) GS R ( at V =2.5V) 43mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON

 9.1. Size:1058K  cn yangzhou yangjie elec
 yjq3415a.pdf

YJQ3400A YJQ3400A

RoHS COMPLIANT YJQ3415A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -6.2A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 100 mohm DS(ON) GS ESD Protected Up to 4.0KV (HBM) General Description Trench Power LV MOSFET technology High Density Cell Des

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: CST08N50D

 

 
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