All MOSFET. YJQ40P03A Datasheet

 

YJQ40P03A Datasheet and Replacement


   Type Designator: YJQ40P03A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DFN3.3X3.3
 

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YJQ40P03A Datasheet (PDF)

 ..1. Size:684K  cn yangzhou yangjie elec
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YJQ40P03A

RoHS COMPLIANT YJQ40P03A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -40A D R ( at V =-20V) 13mohm DS(ON) GS R ( at V =-10V) 15mohm DS(ON) GS R ( at V =-4.5V) 25mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switc

 9.1. Size:1419K  cn yangzhou yangjie elec
 yjq40g10a.pdf pdf_icon

YJQ40P03A

RoHS COMPLIANT YJQ40G10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 40A D R ( at V =10V) 18.5 mohm DS(ON) GS R ( at V =4.5V) 22.5 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Split gate trench MOSFET technology Excellent package for heat dissipation High densit

Datasheet: YJP200G06A , YJP70G10A , YJQ20N04A , YJQ30N03A , YJQ3400A , YJQ3415A , YJQ35N04A , YJQ40G10A , AON7403 , YJQ4666B , YJQ55P02A , YJQ62G06A , YJQD30P02A , YJS03N10A , YJS10N04A , YJS12G06D , YJS2022A .

History: YJQ4666B | NTMFS5C430NLT3G | R6015FNJ | WMO119N12LG4 | SMIRF5N65T9TL | VS6412ASL | AP4501GSD

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