All MOSFET. YJS3404A Datasheet

 

YJS3404A Datasheet and Replacement


   Type Designator: YJS3404A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28.2 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOP8
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YJS3404A Datasheet (PDF)

 ..1. Size:1301K  cn yangzhou yangjie elec
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YJS3404A

RoHS COMPLIANT YJS3404A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 8.5A D R ( at V =10V) 21mohm DS(ON) GS R ( at V =4.5V) 35mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power LV MOSFET technology High density cell design for low R DS(ON) High Speed switching SOP-8 Appl

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AON6973A | TSM4424CS | LKK47-06C5 | FDMS7606 | FQB12P20TM | BRCS200P03DP | IRFB3004GPBF

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