TPS1120Y MOSFET. Datasheet pdf. Equivalent

   Type Designator: TPS1120Y
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 1.17 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Qgⓘ - Total Gate Charge: 5.45 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: CHIP

TPS1120Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TPS1120Y Datasheet (PDF)

..1. Size:373K texas
tps1120 tps1120y.pdf

TPS1120, TPS1120YDUAL P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS080A MARCH 1994 REVISED AUGUST 1995D PACKAGED Low rDS(on) . . . 0.18 at VGS = 10 V(TOP VIEW)D 3-V CompatibleD Requires No External VCC1SOURCE 1 8 1DRAIN1GATE 2 7 1DRAIND TTL and CMOS Compatible Inputs2SOURCE 3 6 2DRAIND VGS(th) = 1.5 V Max2GATE 4 5 2DRAIND ESD Protection Up to 2 kV perMIL

9.1. Size:485K texas
tps1100d tps1100pw.pdf

TPS1100, TPS1100YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS078C DECEMBER 1993 REVISED AUGUST 1995D OR PW PACKAGED Low rDS(on) . . . 0.18 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin

9.2. Size:493K texas
tps1101 tps1101y.pdf

TPS1101, TPS1101YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS079C DECEMBER 1993 REVISED AUGUST 1995D PACKAGED Low rDS(on) . . . 0.09 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin TSSOP

9.3. Size:710K texas
tps1100 tps1100y.pdf