All MOSFET. TMA20N65H Datasheet

 

TMA20N65H MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMA20N65H
   Marking Code: A20N65H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 291 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220F

 TMA20N65H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMA20N65H Datasheet (PDF)

 ..1. Size:364K  cn wuxi unigroup
 tma20n65h tmp20n65h.pdf

TMA20N65H TMA20N65H

TMA20N65H, TMP20N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA20N65H TO-220F A2

 0.1. Size:748K  cn wuxi unigroup
 tma20n65hg tmw20n65hg.pdf

TMA20N65H TMA20N65H

TMA20N65HG,TMW20N65HG Wuxi Unigroup Microelectronics Co.,Ltd 650V N-Channel MOSFET Description 650V N-Channel MOSFET VDMOSFET is a double-diffusion device which the current flows is vertically, and is a voltage-controlled device. Under the control of the appropriate gate voltage, the semiconductor surface is inverted, forming a conductive channel and an appropriate amount of curre

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top