All MOSFET. TMA20N65H Datasheet

 

TMA20N65H Datasheet and Replacement


   Type Designator: TMA20N65H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 291 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220F
 

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TMA20N65H Datasheet (PDF)

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TMA20N65H

TMA20N65H, TMP20N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA20N65H TO-220F A2

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TMA20N65H

TMA20N65HG,TMW20N65HG Wuxi Unigroup Microelectronics Co.,Ltd 650V N-Channel MOSFET Description 650V N-Channel MOSFET VDMOSFET is a double-diffusion device which the current flows is vertically, and is a voltage-controlled device. Under the control of the appropriate gate voltage, the semiconductor surface is inverted, forming a conductive channel and an appropriate amount of curre

Datasheet: TPS1120Y , TMA10N60H , TMA10N65H , TMP10N65H , TMA10N80H , TMA12N50H , TMA12N65H , TMP12N65H , IRF1010E , TMP20N65H , TMA20N65HG , TMW20N65HG , TMA2N60H , TMD2N60H , TMT2N60H , TMU2N60H , TMA4N60H .

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