TMD2N60H Specs and Replacement

Type Designator: TMD2N60H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm

Package: TO252

TMD2N60H substitution

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TMD2N60H datasheet

 ..1. Size:640K  cn wuxi unigroup
 tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf pdf_icon

TMD2N60H

TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info... See More ⇒

 7.1. Size:474K  trinnotech
 tmd2n60z tmu2n60z.pdf pdf_icon

TMD2N60H

TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A ... See More ⇒

 7.2. Size:455K  trinnotech
 tmd2n60az tmu2n60az.pdf pdf_icon

TMD2N60H

TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A ... See More ⇒

 8.1. Size:449K  trinnotech
 tmd2n65az tmu2n65az.pdf pdf_icon

TMD2N60H

TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A ... See More ⇒

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Detailed specifications: TMA12N50H, TMA12N65H, TMP12N65H, TMA20N65H, TMP20N65H, TMA20N65HG, TMW20N65HG, TMA2N60H, IRFP260, TMT2N60H, TMU2N60H, TMA4N60H, TMU4N60H, TMD4N60H, TMP4N60H, TMA6N90H, TMP6N90H

Keywords - TMD2N60H MOSFET specs

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