TMU2N60H Datasheet and Replacement
Type Designator: TMU2N60H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 39 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO251
TMU2N60H substitution
TMU2N60H Datasheet (PDF)
tma2n60h tmd2n60h tmt2n60h tmu2n60h.pdf
TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info
tmd2n60z tmu2n60z.pdf
TMD2N60Z(G)/TMU2N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 2A
tmd2n60az tmu2n60az.pdf
TMD2N60AZ(G)/TMU2N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A
tmd2n65az tmu2n65az.pdf
TMD2N65AZ(G)/TMU2N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A
Datasheet: TMP12N65H , TMA20N65H , TMP20N65H , TMA20N65HG , TMW20N65HG , TMA2N60H , TMD2N60H , TMT2N60H , AON7410 , TMA4N60H , TMU4N60H , TMD4N60H , TMP4N60H , TMA6N90H , TMP6N90H , TMA7N60H , TMC7N60H .
History: UPA2592T1H | FDMA86265P
Keywords - TMU2N60H MOSFET datasheet
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History: UPA2592T1H | FDMA86265P
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