All MOSFET. TMA4N60H Datasheet

 

TMA4N60H Datasheet and Replacement


   Type Designator: TMA4N60H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 69.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220F
 

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TMA4N60H Datasheet (PDF)

 ..1. Size:543K  cn wuxi unigroup
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TMA4N60H

TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf

Datasheet: TMA20N65H , TMP20N65H , TMA20N65HG , TMW20N65HG , TMA2N60H , TMD2N60H , TMT2N60H , TMU2N60H , IRF9540N , TMU4N60H , TMD4N60H , TMP4N60H , TMA6N90H , TMP6N90H , TMA7N60H , TMC7N60H , TMD7N60H .

History: NCE3045G | IPI65R380C6 | SSF7NS70UGX | NCEP055N85 | NP16N06YLL | KMB6D6N30Q | SSP3N90

Keywords - TMA4N60H MOSFET datasheet

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