TMA4N60H Specs and Replacement

Type Designator: TMA4N60H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 69.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO220F

TMA4N60H substitution

- MOSFET ⓘ Cross-Reference Search

 

TMA4N60H datasheet

 ..1. Size:543K  cn wuxi unigroup
 tma4n60h tmu4n60h tmd4n60h tmp4n60h.pdf pdf_icon

TMA4N60H

TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf... See More ⇒

Detailed specifications: TMA20N65H, TMP20N65H, TMA20N65HG, TMW20N65HG, TMA2N60H, TMD2N60H, TMT2N60H, TMU2N60H, SKD502T, TMU4N60H, TMD4N60H, TMP4N60H, TMA6N90H, TMP6N90H, TMA7N60H, TMC7N60H, TMD7N60H

Keywords - TMA4N60H MOSFET specs

 TMA4N60H cross reference

 TMA4N60H equivalent finder

 TMA4N60H pdf lookup

 TMA4N60H substitution

 TMA4N60H replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs