TMA4N60H MOSFET. Datasheet pdf. Equivalent
Type Designator: TMA4N60H
Marking Code: A4N60H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 69.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO220F
TMA4N60H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMA4N60H Datasheet (PDF)
tma4n60h tmu4n60h tmd4n60h tmp4n60h.pdf
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TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf
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