TMU4N60H Datasheet and Replacement
Type Designator: TMU4N60H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 69.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO220
TMU4N60H substitution
TMU4N60H Datasheet (PDF)
tma4n60h tmu4n60h tmd4n60h tmp4n60h.pdf
TMA4N60H,TMU4N60H,TMD4N60H, TMP4N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Inf
tmd4n60 tmu4n60.pdf
TMD4N60/TMU4N60TMD4N60G/TMU4N60GVDSS = 660 V @TjmaxFeaturesID = 4A Low gate chargeRDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationD-PAKDI-PAKGSDevice Package Marking RemarkTMD4N60/TMU4N60 D-PAK/I-PAK TMD4N60/TMU4N60 RoHSTMD4N60G/TMU4N60G D-PAK/I-PAK
tmd4n60az tmu4n60az.pdf
TMD4N60AZ(G)/TMU4N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A
tmd4n65az tmu4n65az.pdf
TMD4N65AZ(G)/TMU4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
Datasheet: TMP20N65H , TMA20N65HG , TMW20N65HG , TMA2N60H , TMD2N60H , TMT2N60H , TMU2N60H , TMA4N60H , IRFB3607 , TMD4N60H , TMP4N60H , TMA6N90H , TMP6N90H , TMA7N60H , TMC7N60H , TMD7N60H , TMU7N60H .
History: SFFC40-28 | NCES120P035T4 | IPD70R950CE | WMM06N80M3 | R6025ANZ | IPA70R360P7S | SI2318CDS
Keywords - TMU4N60H MOSFET datasheet
TMU4N60H cross reference
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History: SFFC40-28 | NCES120P035T4 | IPD70R950CE | WMM06N80M3 | R6025ANZ | IPA70R360P7S | SI2318CDS
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