TMC7N60H Datasheet and Replacement
Type Designator: TMC7N60H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO262
TMC7N60H substitution
TMC7N60H Datasheet (PDF)
tma7n60h tmc7n60h tmd7n60h tmu7n60h.pdf
TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM
Datasheet: TMU2N60H , TMA4N60H , TMU4N60H , TMD4N60H , TMP4N60H , TMA6N90H , TMP6N90H , TMA7N60H , IRFB3607 , TMD7N60H , TMU7N60H , TMA7N65H , TMP7N65H , TMD7N65H , TMU7N65H , TMA8N60H , TMD8N60H .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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