TMC7N60H Specs and Replacement

Type Designator: TMC7N60H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO262

TMC7N60H substitution

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TMC7N60H datasheet

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TMC7N60H

TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM... See More ⇒

Detailed specifications: TMU2N60H, TMA4N60H, TMU4N60H, TMD4N60H, TMP4N60H, TMA6N90H, TMP6N90H, TMA7N60H, IRFB3607, TMD7N60H, TMU7N60H, TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H, TMA8N60H, TMD8N60H

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.