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FDB3632 Specs and Replacement


   Type Designator: FDB3632
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263 D2PAK
 

 FDB3632 substitution

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FDB3632 Specs

 ..1. Size:484K  fairchild semi
fdb3632 f085.pdf pdf_icon

FDB3632

March 2012 FDB3632_F085 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Recti... See More ⇒

 ..2. Size:656K  fairchild semi
fdb3632 fdp3632 fdi3632 fdh3632.pdf pdf_icon

FDB3632

December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi... See More ⇒

 ..3. Size:860K  onsemi
fdh3632 fdp3632 fdb3632.pdf pdf_icon

FDB3632

MOSFET Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 www.onsemi.com Features RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 V VDSS RDS(ON) MAX ID MAX Low Miller Charge 100 V 9 mW 80 A Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) D These Devices are Pb-Free and are R... See More ⇒

 ..4. Size:277K  inchange semiconductor
fdb3632.pdf pdf_icon

FDB3632

isc N-Channel MOSFET Transistor FDB3632 FEATURES With TO-263 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 9m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: FDB2552 , FDB2572 , FDB2614 , STU409DH , FDB2710 , FDB28N30TM , FDB33N25 , FDB3502 , 12N60 , STU40N01 , FDB3652F085 , STU410S , FDB3672F085 , STU411D , FDB3682 , STU412S , FDB3860 .

Keywords - FDB3632 MOSFET specs

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