TMC8N65H Specs and Replacement

Type Designator: TMC8N65H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 129 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO262

TMC8N65H substitution

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TMC8N65H datasheet

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TMC8N65H

TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA... See More ⇒

Detailed specifications: TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H, TMA8N60H, TMD8N60H, TMU8N60H, TMA8N65H, 4N60, TMD8N65H, TMU8N65H, TMB120N08A, TMP120N08A, TMB140N10A, TMB160N08A, TMP160N08A, TMB80N08A

Keywords - TMC8N65H MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.