TMC8N65H MOSFET. Datasheet pdf. Equivalent
Type Designator: TMC8N65H
Marking Code: C8N65H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 129 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO262
TMC8N65H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMC8N65H Datasheet (PDF)
tma8n65h tmc8n65h tmd8n65h tmu8n65h.pdf
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TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA
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