All MOSFET. TMC8N65H Datasheet

 

TMC8N65H Datasheet and Replacement


   Type Designator: TMC8N65H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO262
 

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TMC8N65H Datasheet (PDF)

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TMC8N65H

TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA

Datasheet: TMA7N65H , TMP7N65H , TMD7N65H , TMU7N65H , TMA8N60H , TMD8N60H , TMU8N60H , TMA8N65H , 10N65 , TMD8N65H , TMU8N65H , TMB120N08A , TMP120N08A , TMB140N10A , TMB160N08A , TMP160N08A , TMB80N08A .

History: MPGP10R033 | AP60WN4K9H

Keywords - TMC8N65H MOSFET datasheet

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