All MOSFET. TMP160N10A Datasheet

 

TMP160N10A Datasheet and Replacement


   Type Designator: TMP160N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 614 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220
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TMP160N10A Datasheet (PDF)

 ..1. Size:445K  cn wuxi unigroup
 tmp160n10a.pdf pdf_icon

TMP160N10A

TMP160N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter

 7.1. Size:445K  cn wuxi unigroup
 tmb160n08a tmp160n08a.pdf pdf_icon

TMP160N10A

TMB160N08A,TMP160N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)

 9.1. Size:625K  trinnotech
 tmp16n25z tmpf16n25z.pdf pdf_icon

TMP160N10A

TMP16N25Z(G)/TMPF16N25Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A

 9.2. Size:618K  trinnotech
 tmp16n60a tmpf16n60a.pdf pdf_icon

TMP160N10A

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

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