TPA120R800A MOSFET. Datasheet pdf. Equivalent
Type Designator: TPA120R800A
Marking Code: 120R800A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 66 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
TPA120R800A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPA120R800A Datasheet (PDF)
tpa120r800a tpb120r800a tpw120r800a.pdf
TPA120R800A, TPB120R800A, TPW120R800A Wuxi Unigroup Microelectronics Co.,Ltd1200V Super-junction Power MOSFETDescription1200V super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses de
tpa120r800a.pdf
TPA120R800A Wuxi Unigroup Microelectronics Company 1200V Super-Junction Power MOSFET DESCRIPTION 1200V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and L
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