All MOSFET. TPA120R800A Datasheet

 

TPA120R800A MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPA120R800A
   Marking Code: 120R800A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F

 TPA120R800A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPA120R800A Datasheet (PDF)

 ..1. Size:683K  cn wuxi unigroup
tpa120r800a tpb120r800a tpw120r800a.pdf

TPA120R800A
TPA120R800A

TPA120R800A, TPB120R800A, TPW120R800A Wuxi Unigroup Microelectronics Co.,Ltd1200V Super-junction Power MOSFETDescription1200V super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses de

 ..2. Size:498K  cn wuxi unigroup
tpa120r800a.pdf

TPA120R800A
TPA120R800A

TPA120R800A Wuxi Unigroup Microelectronics Company 1200V Super-Junction Power MOSFET DESCRIPTION 1200V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and L

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VN10LP | SSP5N80A

 

 
Back to Top