TPA60R360MFD Datasheet and Replacement
Type Designator: TPA60R360MFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220F
TPA60R360MFD substitution
TPA60R360MFD Datasheet (PDF)
tpa60r360mfd.pdf

TPA60R360MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-Junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
tpa60r360mfd tpd60r360mfd.pdf

TPA60R360MFD,TPD60R360MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l
tpa60r330m.pdf

TPA60R330M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti
tpa60r3k4c tpp60r3k4c tpu60r3k4c tpd60r3k4c.pdf

TPA60R3K4C,TPP60R3K4C,TPU60R3K4C,TPD60R3K4C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS D Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) G Power Factor Correction (PFC) S Device Marking and Package Information
Datasheet: TPW60R160M , TPA60R170MFD , TPA60R240M , TPB60R240M , TPC60R240M , TPP60R240M , TPA60R260MFD , TPA60R330M , AON7403 , TPD60R360MFD , TPA60R3K4C , TPP60R3K4C , TPU60R3K4C , TPD60R3K4C , TPA60R530M , TPD60R530M , TPU60R530M .
History: PSMN4R8-100PSE | HSP0048
Keywords - TPA60R360MFD MOSFET datasheet
TPA60R360MFD cross reference
TPA60R360MFD equivalent finder
TPA60R360MFD lookup
TPA60R360MFD substitution
TPA60R360MFD replacement
History: PSMN4R8-100PSE | HSP0048



LIST
Last Update
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b | 2n3054 transistor equivalent