Справочник MOSFET. TPA60R360MFD

 

TPA60R360MFD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPA60R360MFD
   Маркировка: 60R360MFD
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 31 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 11 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 20.5 nC
   Время нарастания (tr): 22 ns
   Выходная емкость (Cd): 38 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.36 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для TPA60R360MFD

 

 

TPA60R360MFD Datasheet (PDF)

 ..1. Size:500K  cn wuxi unigroup
tpa60r360mfd.pdf

TPA60R360MFD
TPA60R360MFD

TPA60R360MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-Junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 ..2. Size:665K  cn wuxi unigroup
tpa60r360mfd tpd60r360mfd.pdf

TPA60R360MFD
TPA60R360MFD

TPA60R360MFD,TPD60R360MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l

 7.1. Size:482K  cn wuxi unigroup
tpa60r330m.pdf

TPA60R360MFD
TPA60R360MFD

TPA60R330M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 7.2. Size:578K  cn wuxi unigroup
tpa60r3k4c tpp60r3k4c tpu60r3k4c tpd60r3k4c.pdf

TPA60R360MFD
TPA60R360MFD

TPA60R3K4C,TPP60R3K4C,TPU60R3K4C,TPD60R3K4C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS D Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) G Power Factor Correction (PFC) S Device Marking and Package Information

 7.3. Size:750K  cn wuxi unigroup
tpp60r350c tpa60r350c tpu60r350c tpd60r350c tpc60r350c tpb60r350c.pdf

TPA60R360MFD
TPA60R360MFD

TPP60R350C, TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

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