TPD60R530M Specs and Replacement
Type Designator: TPD60R530M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 27 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: TO252
TPD60R530M substitution
TPD60R530M datasheet
tpa60r530m tpd60r530m tpu60r530m.pdf
TPA60R530M,TPD60R530M,TPU60R530M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET DESCRIPTION 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with... See More ⇒
tpp60r580c tpa60r580c tpu60r580c tpd60r580c tpc60r580c tpb60r580c.pdf
TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C, TPC60R580C,TPB60R580C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package ... See More ⇒
tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf
TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒
tpd60r1k5mfd.pdf
TPD60R1K5MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switc... See More ⇒
Detailed specifications: TPA60R330M , TPA60R360MFD , TPD60R360MFD , TPA60R3K4C , TPP60R3K4C , TPU60R3K4C , TPD60R3K4C , TPA60R530M , AOD4184A , TPU60R530M , TPA60R600MFD , TPD60R600MFD , TPA65R070D , TPB65R070D , TPP65R070D , TPW65R070D , TPA65R090M .
History: NCE60NF019T | FS10KM-6 | FHP120N08D | SIHF510 | KP821B | 2SK2767-01 | AM7300N
Keywords - TPD60R530M MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: NCE60NF019T | FS10KM-6 | FHP120N08D | SIHF510 | KP821B | 2SK2767-01 | AM7300N
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