TPD60R530M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPD60R530M
Маркировка: 60R530M
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 63 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 13.8 nC
trⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 27 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.53 Ohm
Тип корпуса: TO252
Аналог (замена) для TPD60R530M
TPD60R530M Datasheet (PDF)
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Список транзисторов
Обновления
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