TPD60R530M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPD60R530M
Маркировка: 60R530M
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 63 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13.8 nC
Время нарастания (tr): 60 ns
Выходная емкость (Cd): 27 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.53 Ohm
Тип корпуса: TO252
Аналог (замена) для TPD60R530M
TPD60R530M Datasheet (PDF)
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