TPB65R070D MOSFET. Datasheet pdf. Equivalent
Type Designator: TPB65R070D
Marking Code: 65R070D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 312 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 80 nC
Rise Time (tr): 71 nS
Drain-Source Capacitance (Cd): 160 pF
Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
Package: TO263
TPB65R070D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPB65R070D Datasheet (PDF)
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