Справочник MOSFET. TPB65R070D

 

TPB65R070D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPB65R070D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 312 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 71 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для TPB65R070D

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPB65R070D Datasheet (PDF)

 ..1. Size:773K  cn wuxi unigroup
tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdfpdf_icon

TPB65R070D

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 ..2. Size:554K  cn wuxi unigroup
tpb65r070d tpp65r070d.pdfpdf_icon

TPB65R070D

TPB65R070D,TPP65R070D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consum

 6.1. Size:753K  cn wuxi unigroup
tpb65r075dfd tpp65r075dfd tpw65r075dfd.pdfpdf_icon

TPB65R070D

TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic

 8.1. Size:832K  cn wuxi unigroup
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdfpdf_icon

TPB65R070D

TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an

Другие MOSFET... TPU60R3K4C , TPD60R3K4C , TPA60R530M , TPD60R530M , TPU60R530M , TPA60R600MFD , TPD60R600MFD , TPA65R070D , BS170 , TPP65R070D , TPW65R070D , TPA65R090M , TPA65R100MFD , TPV65R100MFD , TPW65R100MFD , TPA65R160C , TPB65R160C .

History: TK65L60V

 

 
Back to Top

 


 
.