TPA65R090M Specs and Replacement
Type Designator: TPA65R090M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 28.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 79 nS
Cossⓘ -
Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO220F
- MOSFET ⓘ Cross-Reference Search
TPA65R090M datasheet
..1. Size:497K cn wuxi unigroup
tpa65r090m.pdf 
TPA65R090M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti... See More ⇒
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tpa65r190mfd.pdf
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tpa65r600m tpb65r600m tpd65r600m tpu65r600m.pdf
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Detailed specifications: TPD60R530M, TPU60R530M, TPA60R600MFD, TPD60R600MFD, TPA65R070D, TPB65R070D, TPP65R070D, TPW65R070D, IRF740, TPA65R100MFD, TPV65R100MFD, TPW65R100MFD, TPA65R160C, TPB65R160C, TPP65R160C, TPR65R160C, TPV65R160C
Keywords - TPA65R090M MOSFET specs
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