TPA65R090M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPA65R090M
Маркировка: 65R090M
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 28.2 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 75 nC
trⓘ - Время нарастания: 79 ns
Cossⓘ - Выходная емкость: 115 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: TO220F
Аналог (замена) для TPA65R090M
TPA65R090M Datasheet (PDF)
tpa65r090m.pdf
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History: IRF9389
History: IRF9389
Список транзисторов
Обновления
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