All MOSFET. TPR65R360M Datasheet

 

TPR65R360M Datasheet and Replacement


   Type Designator: TPR65R360M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69.5 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220FP-NL
 

 TPR65R360M substitution

   - MOSFET ⓘ Cross-Reference Search

 

TPR65R360M Datasheet (PDF)

 ..1. Size:1239K  cn wuxi unigroup
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPR65R360M

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 ..2. Size:876K  cn wuxi unigroup
tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPR65R360M

TPA65R360M,TPB65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 8.1. Size:801K  cn wuxi unigroup
tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf pdf_icon

TPR65R360M

TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

 8.2. Size:808K  cn wuxi unigroup
tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdf pdf_icon

TPR65R360M

TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160CWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct

Datasheet: TPP65R280D , TPU65R280D , TPA65R300MFD , TPA65R360M , TPB65R360M , TPC65R360M , TPD65R360M , TPP65R360M , IRF9540N , TPU65R360M , TPA65R380D , TPD65R380D , TPA65R520D , TPD65R520D , TPA65R600M , TPB65R600M , TPD65R600M .

History: SSM3K16CT | AON6764 | BUZ51 | AUIRFU9024N | PEE50BB | 2SK1694 | JCS6N90CA

Keywords - TPR65R360M MOSFET datasheet

 TPR65R360M cross reference
 TPR65R360M equivalent finder
 TPR65R360M lookup
 TPR65R360M substitution
 TPR65R360M replacement

 

 
Back to Top

 


 
.