Справочник MOSFET. TPR65R360M

 

TPR65R360M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPR65R360M
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 69.5 ns
   Cossⓘ - Выходная емкость: 32 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
   Тип корпуса: TO220FP-NL
 

 Аналог (замена) для TPR65R360M

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPR65R360M Datasheet (PDF)

 ..1. Size:1239K  cn wuxi unigroup
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdfpdf_icon

TPR65R360M

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 ..2. Size:876K  cn wuxi unigroup
tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdfpdf_icon

TPR65R360M

TPA65R360M,TPB65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 8.1. Size:801K  cn wuxi unigroup
tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdfpdf_icon

TPR65R360M

TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

 8.2. Size:808K  cn wuxi unigroup
tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdfpdf_icon

TPR65R360M

TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160CWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct

Другие MOSFET... TPP65R280D , TPU65R280D , TPA65R300MFD , TPA65R360M , TPB65R360M , TPC65R360M , TPD65R360M , TPP65R360M , IRF9540N , TPU65R360M , TPA65R380D , TPD65R380D , TPA65R520D , TPD65R520D , TPA65R600M , TPB65R600M , TPD65R600M .

History: 7N60L-A-TF3 | SUP90N08-7M7P | CJP04N60 | KP751A1 | BSZ160N10NS3 | AP04N60J | IRFI9530GPBF

 

 
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