All MOSFET. TPV70R190C Datasheet


TPV70R190C MOSFET. Datasheet pdf. Equivalent

   Type Designator: TPV70R190C
   Marking Code: 70R190C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 198 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO3PN

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TPV70R190C Datasheet (PDF)

 ..1. Size:913K  cn wuxi unigroup
tpa70r190c tpc70r190c tpp70r190c tpv70r190c.pdf


TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190CWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses

 9.1. Size:79K  motorola


MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV7025/DThe RF LineUHF Linear Power TransistorTPV7025. . . designed for output stages in Band IV & V TV transmitter amplifiers. Internalmatching of both input and output along with use of a pushpull packageconfiguration aids broadband amplifier designs.Gold metallized dice with diffused emitter ballast resistors e

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