TPV70R190C Datasheet. Specs and Replacement
Type Designator: TPV70R190C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 116 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO3PN
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TPV70R190C substitution
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TPV70R190C datasheet
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TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190C Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-junction Power MOSFET Description 700V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses ... See More ⇒
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV7025/D The RF Line UHF Linear Power Transistor TPV7025 . . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push pull package configuration aids broadband amplifier designs. Gold metallized dice with diffused emitter ballast resistors e... See More ⇒
Detailed specifications: TPP65R750C, TPU65R750C, TPA65R950M, TPB65R950M, TPD65R950M, TPA70R190C, TPC70R190C, TPP70R190C, IRF2807, TPA70R260M, TPA70R360M, TPD70R360M, TPP70R360M, TPU70R360M, TPA70R450C, TPB70R450C, TPC70R450C
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
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