All MOSFET. TPV70R190C Datasheet

 

TPV70R190C Datasheet and Replacement


   Type Designator: TPV70R190C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 198 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO3PN
 

 TPV70R190C substitution

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TPV70R190C Datasheet (PDF)

 ..1. Size:913K  cn wuxi unigroup
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TPV70R190C

TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190CWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses

 9.1. Size:79K  motorola
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TPV70R190C

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV7025/DThe RF LineUHF Linear Power TransistorTPV7025. . . designed for output stages in Band IV & V TV transmitter amplifiers. Internalmatching of both input and output along with use of a pushpull packageconfiguration aids broadband amplifier designs.Gold metallized dice with diffused emitter ballast resistors e

Datasheet: TPP65R750C , TPU65R750C , TPA65R950M , TPB65R950M , TPD65R950M , TPA70R190C , TPC70R190C , TPP70R190C , STP80NF70 , TPA70R260M , TPA70R360M , TPD70R360M , TPP70R360M , TPU70R360M , TPA70R450C , TPB70R450C , TPC70R450C .

History: PHU101NQ03LT | BSO204P | ECH8695R | YJD45P03A | FDD6680S | MMP3401 | FHD4N65E

Keywords - TPV70R190C MOSFET datasheet

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