TPV70R190C MOSFET. Datasheet pdf. Equivalent
Type Designator: TPV70R190C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 116 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO3PN
TPV70R190C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPV70R190C Datasheet (PDF)
tpa70r190c tpc70r190c tpp70r190c tpv70r190c.pdf
TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190CWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses
tpv7025r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV7025/DThe RF LineUHF Linear Power TransistorTPV7025. . . designed for output stages in Band IV & V TV transmitter amplifiers. Internalmatching of both input and output along with use of a pushpull packageconfiguration aids broadband amplifier designs.Gold metallized dice with diffused emitter ballast resistors e
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History: 2N4392CSM | FCP9N60N
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