TPV70R190C MOSFET. Datasheet pdf. Equivalent
Type Designator: TPV70R190C
Marking Code: 70R190C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 46 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 116 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO3PN
TPV70R190C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPV70R190C Datasheet (PDF)
tpa70r190c tpc70r190c tpp70r190c tpv70r190c.pdf
TPA70R190C,TPC70R190C,TPP70R190C,TPV70R190CWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses
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