All MOSFET. TPP80R300C Datasheet

 

TPP80R300C MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPP80R300C
   Marking Code: 80R300C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220

 TPP80R300C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPP80R300C Datasheet (PDF)

 ..1. Size:663K  cn wuxi unigroup
tpp80r300c tpa80r300c tpv80r300c tpc80r300c tpb80r300c.pdf

TPP80R300C
TPP80R300C

TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Informatio

 ..2. Size:1210K  cn wuxi unigroup
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPP80R300C
TPP80R300C

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 8.1. Size:594K  cn wuxi unigroup
tpp80r270m.pdf

TPP80R300C
TPP80R300C

TPP80R270MWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness ma

 8.2. Size:753K  cn wuxi unigroup
tpa80r750c tpb80r750c tpc80r750c tpd80r750c tpp80r750c tpu80r750c.pdf

TPP80R300C
TPP80R300C

TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.3. Size:567K  cn wuxi unigroup
tpa80r250a tpp80r250a tpw80r250a.pdf

TPP80R300C
TPP80R300C

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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