Справочник MOSFET. TPP80R300C

 

TPP80R300C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPP80R300C
   Маркировка: 80R300C
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 151 W
   Предельно допустимое напряжение сток-исток |Uds|: 800 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 15 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 46 nC
   Время нарастания (tr): 14 ns
   Выходная емкость (Cd): 116 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.3 Ohm
   Тип корпуса: TO220

 Аналог (замена) для TPP80R300C

 

 

TPP80R300C Datasheet (PDF)

 ..1. Size:663K  cn wuxi unigroup
tpp80r300c tpa80r300c tpv80r300c tpc80r300c tpb80r300c.pdf

TPP80R300C
TPP80R300C

TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Informatio

 ..2. Size:1210K  cn wuxi unigroup
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPP80R300C
TPP80R300C

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 8.1. Size:594K  cn wuxi unigroup
tpp80r270m.pdf

TPP80R300C
TPP80R300C

TPP80R270MWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness ma

 8.2. Size:753K  cn wuxi unigroup
tpa80r750c tpb80r750c tpc80r750c tpd80r750c tpp80r750c tpu80r750c.pdf

TPP80R300C
TPP80R300C

TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.3. Size:567K  cn wuxi unigroup
tpa80r250a tpp80r250a tpw80r250a.pdf

TPP80R300C
TPP80R300C

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa

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