TPW65R120M Datasheet and Replacement
Type Designator: TPW65R120M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO247
TPW65R120M substitution
TPW65R120M Datasheet (PDF)
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TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de
tpw65r120m.pdf

TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-Junction Power MOSFETDESCRIPTION650V super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighting ma
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TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
Datasheet: TPP80R750C , TPU80R750C , TPB65R075DFD , TPP65R075DFD , TPW65R075DFD , TPB65R120M , TPP65R120M , TPR65R120M , 20N60 , TPB65R135MFD , TPP65R135MFD , TPW65R135MFD , TPB70R950M , TPD70R950M , TPD50R3K8D , TPD60R1K4M , TPU60R1K4M .
History: AP4506GEH-HF | MSF2N70 | AP99T06AGP-HF | IRLR8256PBF | BL7N80-P | IXFT28N50Q | AP6985GN2-HF
Keywords - TPW65R120M MOSFET datasheet
TPW65R120M cross reference
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History: AP4506GEH-HF | MSF2N70 | AP99T06AGP-HF | IRLR8256PBF | BL7N80-P | IXFT28N50Q | AP6985GN2-HF



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