TPW65R120M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPW65R120M
Маркировка: 65R120M
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 219 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 57 nC
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 90 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.12 Ohm
Тип корпуса: TO247
Аналог (замена) для TPW65R120M
TPW65R120M Datasheet (PDF)
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tpw65r120m.pdf
TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-Junction Power MOSFETDESCRIPTION650V super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighting ma
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