STU326S
MOSFET. Datasheet pdf. Equivalent
Type Designator: STU326S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 52
A
Qgⓘ - Total Gate Charge: 10
nC
Cossⓘ -
Output Capacitance: 245
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063
Ohm
Package:
TO252
DPAK
STU326S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STU326S
Datasheet (PDF)
..1. Size:107K samhop
stu326s std326s.pdf 
GrerrPPrPrProSTU/D326SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.6.3 @ VGS=10VTO-252 and TO-251 Package.52A30V9.5 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK
9.1. Size:149K samhop
stu328s std328s.pdf
GreerrPPrPrProSTU/D328SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.4.9 @ VGS=10VTO-252 and TO-251 Package.58A30V7.2 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK
9.2. Size:99K samhop
stu320s std320s.pdf
STU/D320SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.20 @ VGS=10V30V 30A TO-252 and TO-251 Package.29 @ VGS=4.5VESD Protected.DDGGSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(l-PAK)S
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