All MOSFET. TPD60R1K4M Datasheet

 

TPD60R1K4M Datasheet and Replacement


   Type Designator: TPD60R1K4M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO252
 

 TPD60R1K4M substitution

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TPD60R1K4M Datasheet (PDF)

 ..1. Size:537K  cn wuxi unigroup
 tpd60r1k4m tpu60r1k4m.pdf pdf_icon

TPD60R1K4M

TPD60R1K4M,TPU60R1K4MWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

 6.1. Size:451K  cn wuxi unigroup
 tpd60r1k5mfd.pdf pdf_icon

TPD60R1K4M

TPD60R1K5MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switc

 8.1. Size:738K  cn wuxi unigroup
 tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf pdf_icon

TPD60R1K4M

TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.2. Size:578K  cn wuxi unigroup
 tpa60r3k4c tpp60r3k4c tpu60r3k4c tpd60r3k4c.pdf pdf_icon

TPD60R1K4M

TPA60R3K4C,TPP60R3K4C,TPU60R3K4C,TPD60R3K4C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS D Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) G Power Factor Correction (PFC) S Device Marking and Package Information

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Datasheet: TPR65R120M , TPW65R120M , TPB65R135MFD , TPP65R135MFD , TPW65R135MFD , TPB70R950M , TPD70R950M , TPD50R3K8D , IRF1404 , TPU60R1K4M , TPD60R1K5MFD , TPD60R330M , TPD65R700MFD , TPD70R1K5M , TPD80R900M , TPU80R900M , TPG60R070DFDH .

History: 8N65KG-TN3-R | UP9T15G | 2SJ409L | MPSW65M046CFD | SIHF820L | NCE50NF220K | APT20M40HVR

Keywords - TPD60R1K4M MOSFET datasheet

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