Справочник MOSFET. TPD60R1K4M

 

TPD60R1K4M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPD60R1K4M
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 62 ns
   Cossⓘ - Выходная емкость: 15 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для TPD60R1K4M

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPD60R1K4M Datasheet (PDF)

 ..1. Size:537K  cn wuxi unigroup
 tpd60r1k4m tpu60r1k4m.pdf pdf_icon

TPD60R1K4M

TPD60R1K4M,TPU60R1K4MWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

 6.1. Size:451K  cn wuxi unigroup
 tpd60r1k5mfd.pdf pdf_icon

TPD60R1K4M

TPD60R1K5MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switc

 8.1. Size:738K  cn wuxi unigroup
 tpp60r840c tpa60r840c tpu60r840c tpd60r840c tpc60r840c tpb60r840c.pdf pdf_icon

TPD60R1K4M

TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.2. Size:578K  cn wuxi unigroup
 tpa60r3k4c tpp60r3k4c tpu60r3k4c tpd60r3k4c.pdf pdf_icon

TPD60R1K4M

TPA60R3K4C,TPP60R3K4C,TPU60R3K4C,TPD60R3K4C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS D Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) G Power Factor Correction (PFC) S Device Marking and Package Information

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TPR65R120M , TPW65R120M , TPB65R135MFD , TPP65R135MFD , TPW65R135MFD , TPB70R950M , TPD70R950M , TPD50R3K8D , IRF1404 , TPU60R1K4M , TPD60R1K5MFD , TPD60R330M , TPD65R700MFD , TPD70R1K5M , TPD80R900M , TPU80R900M , TPG60R070DFDH .

History: IRFS4228PBF | AFN1912

 

 
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