TPA60R350C Specs and Replacement

Type Designator: TPA60R350C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO220F

TPA60R350C substitution

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TPA60R350C datasheet

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TPA60R350C

TPP60R350C, TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒

 7.1. Size:482K  cn wuxi unigroup
 tpa60r330m.pdf pdf_icon

TPA60R350C

TPA60R330M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti... See More ⇒

 7.2. Size:578K  cn wuxi unigroup
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TPA60R350C

TPA60R3K4C,TPP60R3K4C,TPU60R3K4C,TPD60R3K4C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS D Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) G Power Factor Correction (PFC) S Device Marking and Package Information ... See More ⇒

 7.3. Size:500K  cn wuxi unigroup
 tpa60r360mfd.pdf pdf_icon

TPA60R350C

TPA60R360MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,... See More ⇒

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Detailed specifications: TPD50R400C, TPC50R400C, TPB50R400C, TPP60R150C, TPA60R150C, TPV60R150C, TPC60R150C, TPP60R350C, SPP20N60C3, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C, TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C

Keywords - TPA60R350C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.