TPA60R350C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPA60R350C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 50 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TO220F
Аналог (замена) для TPA60R350C
TPA60R350C Datasheet (PDF)
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Другие MOSFET... TPD50R400C , TPC50R400C , TPB50R400C , TPP60R150C , TPA60R150C , TPV60R150C , TPC60R150C , TPP60R350C , AON7410 , TPU60R350C , TPD60R350C , TPC60R350C , TPB60R350C , TPP60R580C , TPA60R580C , TPU60R580C , TPD60R580C .
History: STB100NF04T4 | AP2309GN | 15N12
History: STB100NF04T4 | AP2309GN | 15N12



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