TPA60R350C. Аналоги и основные параметры
Наименование производителя: TPA60R350C
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 50 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TO220F
Аналог (замена) для TPA60R350C
- подборⓘ MOSFET транзистора по параметрам
TPA60R350C даташит
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Другие IGBT... TPD50R400C, TPC50R400C, TPB50R400C, TPP60R150C, TPA60R150C, TPV60R150C, TPC60R150C, TPP60R350C, SPP20N60C3, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C, TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C
History: FTK25N03PDFN33 | TPCF8002 | FTK3134KD
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