TPP65R600C MOSFET. Datasheet pdf. Equivalent
Type Designator: TPP65R600C
Marking Code: 65R600C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.5 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 31 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
Package: TO220
TPP65R600C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPP65R600C Datasheet (PDF)
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TPP60R580C
