TPP65R600C
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPP65R600C
Маркировка: 65R600C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 63
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 14.5
nC
trⓘ -
Время нарастания: 25
ns
Cossⓘ - Выходная емкость: 31
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.62
Ohm
Тип корпуса:
TO220
- подбор MOSFET транзистора по параметрам
TPP65R600C
Datasheet (PDF)
..1. Size:741K cn wuxi unigroup
tpp65r600c tpa65r600c tpu65r600c tpd65r600c tpc65r600c tpb65r600c.pdf 
TPP65R600C, TPA65R600C, TPU65R600C, TPD65R600C, TPC65R600C, TPB65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
8.1. Size:554K cn wuxi unigroup
tpp65r160c tpa65r160c tpv65r160c.pdf 
TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki
8.2. Size:832K cn wuxi unigroup
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf 
TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an
8.3. Size:1239K cn wuxi unigroup
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf 
TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com
8.4. Size:947K cn wuxi unigroup
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf 
TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
8.5. Size:1069K cn wuxi unigroup
tpa65r260m tpb65r260m tpc65r260m tpp65r260m tpv65r260m tpw65r260m.pdf 
TPA65R260M, TPB65R260M, TPC65R260M, TPP65R260M, TPV65R260M, TPW65R260MWuxiUnigroupMicroelectronicsCompany650V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Pac
8.6. Size:626K cn wuxi unigroup
tpa65r170m tpp65r170m tpv65r170m tpw65r170m.pdf 
TPA65R170M, TPP65R170M, TPV65R170M, TPW65R170M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device T
8.7. Size:515K cn wuxi unigroup
tpp65r940c tpa65r940c tpu65r940c tpd65r940c tpc65r940c tpb65r940c.pdf 
TPP65R940C, TPA65R940C, TPU65R940C, TPD65R940C, TPC65R940C, TPB65R940C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
8.8. Size:773K cn wuxi unigroup
tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdf 
TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse
8.9. Size:801K cn wuxi unigroup
tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf 
TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de
8.10. Size:808K cn wuxi unigroup
tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdf 
TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160CWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct
8.11. Size:554K cn wuxi unigroup
tpb65r070d tpp65r070d.pdf 
TPB65R070D,TPP65R070D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consum
8.12. Size:876K cn wuxi unigroup
tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf 
TPA65R360M,TPB65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
8.13. Size:673K cn wuxi unigroup
tpa65r360m tpd65r360m tpp65r360m tpu65r360m.pdf 
TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360MWuxiUnigroupMicroelectronicsCompany650V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Package InformationDevice
8.14. Size:750K cn wuxi unigroup
tpp65r380c tpa65r380c tpu65r380c tpd65r380c tpc65r380c tpb65r380c.pdf 
TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
8.15. Size:755K cn wuxi unigroup
tpa65r280d tpb65r280d tpc65r280d tpd65r280d tpp65r280d tpu65r280d.pdf 
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
8.16. Size:753K cn wuxi unigroup
tpb65r075dfd tpp65r075dfd tpw65r075dfd.pdf 
TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic
8.17. Size:758K cn wuxi unigroup
tpa65r750c tpb65r750c tpc65r750c tpd65r750c tpp65r750c tpu65r750c.pdf 
TPA65R750C, TPB65R750C, TPC65R750C, TPD65R750C, TPP65R750C, TPU65R750C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
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History: RU3060L
| 2N4416AC1C
